High efficiency passively mode-locked Nd:YVO_4 laser with direct in-band pumping at 914 nm

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Diode-pumped passively mode-locked Nd:YVO4 laser at 914 nm.

We demonstrate, for the first time, to our knowledge, a diode-pumped passively mode-locked Nd:YVO4 laser, operating on the 4F(3/2)-4I(9/2) transition of the neodymium ion at 914 nm. We obtained 8.8 ps pulses at approximately 914 nm at a repetition rate of 94 MHz, and an averaged output power of 87 mW by using a semiconductor saturable absorber mirror.

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Highly efficient Nd:YVO4 laser by direct in-band diode pumping at 914 nm.

A Nd:YVO4 crystal was pumped directly into the emitting level by a laser diode at 914 nm for the first time to our knowledge. We achieved an output power of 11.5 W at 1064 nm for an absorbed pump power of 14.6 W, corresponding to an optical efficiency of 78.7%. We demonstrated that thermal effects are very weak, in agreement with the low quantum defect of only 14.1%.

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We demonstrate a diode-end-pumped passively mode-locked 1338 nm Nd:YAG laser with a semiconductor saturable absorber mirror. At the absorbed pump power of 8.89 W, an average output power of 1.12 W was obtained with a slope efficiency of 14%. The pulse width was 22.4 ps with a repetition rate of 63.9 MHz, corresponding to a peak power of 782 W. In addition, the bandwidth of the mode-locking spec...

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ژورنال

عنوان ژورنال: Optics Express

سال: 2016

ISSN: 1094-4087

DOI: 10.1364/oe.24.012851